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2SK3176 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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2SK3176 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page 2SK3176 2009-09-29 3 0 0 4 2 5 3 4 8 12 16 20 ID = 30 A 15 7.5 Common source Tc = 25°C Pulse test 1 10 0 8 20 4 12 16 Common source Tc = 25°C Pulse test VGS = 3.4 V 3.8 4 6 8 15 5 0 2.0 0.8 0.4 1.2 1.6 3.6 15 0 0 20 50 20 8 10 30 40 Common source Tc = 25°C Pulse test 4 12 16 4.8 3.8 8 VGS = 3.6 V 4.2 6 5 4.6 4.4 4 10 30 0 0 2 4 10 8 10 20 40 50 25 100 Tc = −55°C 6 Common source VDS = 10 V Pulse test VGS = 10 V Common source Tc = 25°C Pulse test 0.01 1 0.05 0.03 0.1 0.3 10 3 5 30 50 100 0.5 15 Common source VDS = 10 V Pulse test 1 0.3 10 5 3 30 50 1 10 0.5 3 5 100 100 Tc = −55°C 100 25 30 50 ID – VDS ID – VDS Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS VDS – VGS Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID RDS (ON) – ID Drain current ID (A) Drain current ID (A) |
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