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2SK2598 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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2SK2598 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2598 2009-09-29 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 250 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 200 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 — 3.5 V Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 6.5 A — 0.18 0.25 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 6.5 A 6 13 — S Input capacitance Ciss — 1800 — Reverse transfer capacitance Crss — 130 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 500 — pF Rise time tr — 15 — Turn−on time ton — 25 — Fall time tf — 10 — Switching time Turn−off time toff — 70 — ns Total gate charge (Gate−source plus gate−drain) Qg — 40 — Gate−source charge Qgs — 25 — Gate−drain (“miller”) charge Qgd VDD ≈ 200 V, VGS = 10 V, ID = 13 A — 15 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 13 A Pulse drain reverse current (Note 1) IDRP — — — 52 A Forward voltage (diode) VDSF IDR = 13 A, VGS = 0 V — — −2.0 V Reverse recovery time trr — 260 — ns Reverse recovery charge Qrr IDR = 13 A, VGS = 0 V dIDR / dt = 100 A / μs — 0.3 — μC Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Lot No. Note 4 K2598 Part No. (or abbreviation code) |
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