2SJ681_09 datasheet(3/6 Pages) TOSHIBA

Il numero della parte	2SJ681

Spiegazioni elettronici	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

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3 / 6 page

2SJ681

2009-09-29

3

ID – VDS

Drain

−source voltage VDS (V)

0

−5

−1

−3

−2

−4

0

−0.4

−2.0

−0.8

−1.2

−1.6

−10

−8

−6

−2.8

−3.5

−4.

VGS = −2.5V

Common source

Tc

= 25°C

Pulse test

ID – VDS

Drain

−source voltage VDS (V)

0

−10

−2

−6

−4

−8

−2

0

−10

−4

−6

−8

−10

−8

−6

−4

−3.5

−3

VGS = −2.5 V

Common source

Tc

= 25°C

Pulse test

ID – VGS

Gate

−source voltage VGS (V)

0

−10

−2

−6

−8

−1

0

−5

−3

−4

100

25

Tc

= −55°C

Common source

VDS = −10 V

Pulse test

VDS – VGS

Gate

−source voltage VGS (V)

0

−2.0

−0.4

−1.2

−0.8

−1.6

−4

0

−20

−8

−12

−16

−5

−2.5

ID = −1.2 A

Common source

Tc

= 25°C

Pulse test

⎪Yfs⎪ − ID

Drain current ID (A)

0.1

100

10

1

−0.1

−100

−1

Common source

VDS = −10 V

Pulse test

Tc

= −55°C

25

100

RDS (ON) − ID

Drain current ID (A)

0

0.4

0.5

0

−2

−10

Common source

Tc

= 25°C

Pulse test

−10

−4

−3

−4

−2

0.3

0.1

0.2

−6

−8

VGS = −10V

−4 V

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