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SI4410DY Scheda tecnica(PDF) 6 Page - NXP Semiconductors |
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SI4410DY Scheda tecnica(HTML) 6 Page - NXP Semiconductors |
6 / 12 page SI4410DY_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 4 December 2009 6 of 12 NXP Semiconductors SI4410DY N-channel TrenchMOS logic level FET Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 03ad50 0 10 20 30 40 50 0 0.5 1 1.5 VDS (V) ID (A) 3 V 3.2 V 3.4 V 3.6 V 3.8 V 10 V 2.8 V 5 V VGS = 2.6 V 03ad52 0 10 20 30 40 50 01234 VGS (V) ID (A) VDS > ID x RDSon Tj = 150 °C 25 °C 03aa36 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0123 VGS (V) ID (A) max typ min 03ad54 10 103 104 10−1 1 10 102 VDS (V) C (pF) Ciss Coss Crss |
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