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STPS61L60CT Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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2 / 8 page Characteristics STPS61L60C 2/8 Doc ID 15641 Rev 1 1 Characteristics When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x R th(j-c)(Per diode) + P(diode 2) x Rth(c). To evaluate the conduction losses use the following equation: P = 0.44 x IF(AV) + 0.006 x IF 2 (RMS) Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) RMS forward voltage 50 A IF(AV) Average forward current δ = 0.5 Tc = 125 °C Tc = 120 °C Per diode Per device 30 60 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal T0-247 T0-220AB 530 400 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 11500 W Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature (1) 150 °C 1. condition to avoid runaway for a diode on its own heatsink dPtot dTj --------------- 1 Rth j a – () -------------------------- < Table 3. Thermal resistances Symbol Parameter Value Unit Rth(j-c) Junction to case TO-247 Per diode Total 0.95 0.6 °C/W TO-220AB Per diode Total 1.1 0.7 Rth(c) Coupling TO-247 0.25 TO-220AB 0.3 Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) Reverse leakage current Tj = 25 °C VR = VRRM -- 0.8 mA Tj = 125 °C - 150 350 VF (2) Forward voltage drop Tj = 25 °C IF = 5 A - 0.360 - V Tj = 125 °C IF = 5 A - 0.255 - Tj = 25 °C IF = 15 A - 0.460 0.540 Tj = 125 °C IF = 15 A - 0.415 0.480 Tj = 25 °C IF = 30 A - 0.580 0.660 Tj = 125 °C IF = 30 A - 0.560 0.620 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% |
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