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STPS61L60CT Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte STPS61L60CT
Spiegazioni elettronici  Power Schottky rectifer
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
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STPS61L60CT Scheda tecnica(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS61L60C
2/8
Doc ID 15641 Rev 1
1
Characteristics
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
th(j-c)(Per diode) + P(diode 2) x Rth(c).
To evaluate the conduction losses use the following equation:
P = 0.44 x IF(AV) + 0.006 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
60
V
IF(RMS)
RMS forward voltage
50
A
IF(AV)
Average forward current
δ = 0.5
Tc = 125 °C
Tc = 120 °C
Per diode
Per device
30
60
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal
T0-247
T0-220AB
530
400
A
PARM
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C
11500
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (1)
150
°C
1.
condition to avoid runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a
()
--------------------------
<
Table 3.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-247
Per diode
Total
0.95
0.6
°C/W
TO-220AB
Per diode
Total
1.1
0.7
Rth(c)
Coupling
TO-247
0.25
TO-220AB
0.3
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
--
0.8
mA
Tj = 125 °C
-
150
350
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 5 A
-
0.360
-
V
Tj = 125 °C
IF = 5 A
-
0.255
-
Tj = 25 °C
IF = 15 A
-
0.460
0.540
Tj = 125 °C
IF = 15 A
-
0.415
0.480
Tj = 25 °C
IF = 30 A
-
0.580
0.660
Tj = 125 °C
IF = 30 A
-
0.560
0.620
1.
Pulse test: tp = 5 ms, δ < 2%
2.
Pulse test: tp = 380 µs, δ < 2%


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