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TPCC8009 Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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TPCC8009 Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCC8009 2010-01-05 4 50 30 20 0 40 10 0 0.2 0.4 0.6 0.8 VGS = 3.5 V 3.7 5.8 10 1 4.3 4.2 0 0 1 2 3 4 50 Ta = −55°C 25 100 0 0.3 0 ID = 24 A 2 4 8 6 12 0.2 10 1 0.1 10 100 100 2 16 12 8 4 0 20 0 0.8 VGS = 3.8 V 1.6 1.2 0.4 3.9 10 VGS = 6 V 1 5 30 20 0.4 6 4 4.7 0.1 10 4.7 10 5.3 4.4 4.2 5 4.3 6 4.1 4.5 6 4 4.5 4.6 4.8 40 10 5 6 ID – VDS ID – VDS Drain-source voltage VDS (V) Drain current ID (A) RDS (ON) – ID Drain-source voltage VDS (V) Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Common source Ta = 25°C Pulse test Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test |
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