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TPCA8025 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TPCA8025
Spiegazioni elettronici  Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TPCA8025 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

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TPCA8025
2008-06-27
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = −20 V
10
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.3
2.5
V
VGS = 4.5 V, ID = 20 A
4.2
6
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 20 A
2.7
3.5
m
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 20 A
40
80
S
Input capacitance
Ciss
2200
Reverse transfer capacitance
Crss
430
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
690
pF
Rise time
tr
12
Turn-ON time
ton
22
Fall time
tf
23
Switching time
Turn-OFF time
toff
Duty
1%, tw = 10 μs
74
ns
Total gate charge
(gate-source plus gate-drain)
Qg
49
Gate-source charge 1
Qgs1
8.5
Gate-drain (“miller”) charge
Qgd
VDD 24 V, VGS = 10 V, ID = 40 A
16
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
120
A
Forward voltage (diode)
VDSF
IDR = 40 A, VGS = 0 V
1.2
V
VDD 15 V
0 V
VGS
10 V
ID = 20 A
VOUT


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