1.

Product profile

1.1 General description

These switches are a combination of a depletion type Field-Effect Transistor (FET) and a

band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The

low loss and high isolation capabilities of these devices provide excellent RF switching

functions. The gate of the MOSFET can be isolated from ground with the diode, resulting

in low losses. Integrated diodes between gate and source and between gate and drain

protect against excessive input voltage surges.

1.2 Features

1.3 Applications

1.4 Quick reference data

[1]

BF1108; BF1108R

Silicon RF switches

Rev. 04 — 29 May 2008

Product data sheet

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1] --

2

dB

off-state isolation

30

--dB

drain-source on-state

resistance

-

12

20

Ω

gate-source pinch-off

voltage

−3

−4V