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Motore di ricerca datesheet componenti elettronici |
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BF904AR Scheda tecnica(PDF) 5 Page - NXP Semiconductors |
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BF904AR Scheda tecnica(HTML) 5 Page - NXP Semiconductors |
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5 / 15 page  NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR Fig.5 Transfer admittance as a function of the junction temperature; typical values. 50 0 50 150 30 0 MLD268 100 T ( C) o j Yfs (mS) 40 20 10 Fig.6 Typical gain reduction as a function of the AGC voltage; see Fig.21. f = 50 MHz. handbook, halfpage 0 10 20 30 40 50 01234 V (V) AGC gain reduction (dB) MRA769 Fig.7 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.21. VDS = 5 V; VGG = 5 V; fw = 50 MHz. funw = 60 MHz; Tamb =25 °C; RG1 = 120 kΩ. handbook, halfpage 80 90 100 110 120 0 1020 304050 Vunw (dB V) gain reduction (dB) MRA771 µ Fig.8 Transfer characteristics; typical values. VDS =5V. Tj =25 °C. 0 20 10 15 5 0 0.4 2.0 MLD270 0.8 1.2 1.6 I D (mA) V (V) G1 S 2 V 1.5 V 1 V V = 4 V 3 V 2.5 V G2 S Rev. 04 - 13 November 2007 5 of 15 |
Codice articolo simile - BF904AR |
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Descrizione simile - BF904AR |
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