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BC847BVN Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BC847BVN Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  2001 Nov 07 3 NXP Semiconductors Product data sheet NPN/PNP general purpose transistor BC847BVN THERMAL CHARACTERISTICS Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering is reflow soldering. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient notes 1 and 2 416 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB = 30 V; IE = 0 − − 15 nA VCB = 30 V; IE = 0; Tj = 150 °C − − 5 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 5 V; IC = 2 mA 200 − 450 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 100 mV IC = 100 mA; IB = 5 mA; note 1 − − 300 mV VBEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 755 − mV fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz NPN transistor VBE base-emitter turn-on voltage VCE = 5 V; IC = 2 mA 580 655 700 mV Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1MHz − − 1.5 pF Ce emitter capacitance VEB = 500 mV; IC = Ic = 0; f = 1MHz − 11 − pF PNP transistor VBE base-emitter turn-on voltage VCE = −5 V; IC = −2 mA 600 655 750 mV Cc collector capacitance VCB = −10 V; IC = Ic = 0; f = 1MHz − − 2.2 pF Ce emitter capacitance VEB = −500 mV; IE = Ie = 0; f = 1MHz − 10 − pF |
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