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BC846BPN Scheda tecnica(PDF) 9 Page - NXP Semiconductors |
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BC846BPN Scheda tecnica(HTML) 9 Page - NXP Semiconductors |
9 / 15 page BC846BPN_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 17 July 2009 9 of 15 NXP Semiconductors BC846BPN 65 V, 100 mA NPN/PNP general-purpose transistor VCE = −5 V; Tamb =25 °CIC/IB =20 (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 13. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 14. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C VCE = −5 V; Tamb =25 °C Fig 15. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 16. TR2 (PNP): Transition frequency as a function of collector current; typical values 006aaa544 −0.6 −0.8 −1 VBE (V) −0.4 IC (mA) −10−1 −103 −102 −1 −10 006aaa542 IC (mA) −10−1 −103 −102 −1 −10 −0.5 −0.9 −1.3 −0.3 −0.7 −1.1 VBEsat (V) −0.1 (1) (2) (3) 006aaa543 −1 −10−1 −10 VCEsat (V) −10−2 IC (mA) −10−1 −103 −102 −1 −10 (1) (2) (3) IC (mA) −1 −102 −10 006aaa545 102 103 fT (MHz) 10 |
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