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BAT160 Scheda tecnica(PDF) 3 Page - NXP Semiconductors

Il numero della parte BAT160
Spiegazioni elettronici  Schottky barrier double diodes
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAT160 Scheda tecnica(HTML) 3 Page - NXP Semiconductors

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1999 Sep 20
3
NXP Semiconductors
Product data sheet
Schottky barrier double diodes
BAT160 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1.
Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1.
Refer to SOT223 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
60
V
IF
continuous forward current
1
A
IFSM
non-repetitive peak forward current
tp = 8.3 ms; half sinewave;
JEDEC method
10
A
IRSM
non-repetitive peak reverse current
tp = 100 μs
0.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.5
IF = 100 mA
400
mV
IF = 1 A
650
mV
IF = 2 A
850
mV
IR
reverse current
VR = 60 V; note 1; see Fig.6
350
μA
VR = 60 V; Tj = 100 °C; note 1;
see Fig.6
8
mA
Cd
diode capacitance
f = 1 MHz; VR = 4 V; see Fig 7
60
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W


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