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BAT160 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BAT160 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 1999 Sep 20 3 NXP Semiconductors Product data sheet Schottky barrier double diodes BAT160 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT223 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 60 V IF continuous forward current − 1 A IFSM non-repetitive peak forward current tp = 8.3 ms; half sinewave; JEDEC method − 10 A IRSM non-repetitive peak reverse current tp = 100 μs − 0.5 A Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.5 IF = 100 mA 400 mV IF = 1 A 650 mV IF = 2 A 850 mV IR reverse current VR = 60 V; note 1; see Fig.6 350 μA VR = 60 V; Tj = 100 °C; note 1; see Fig.6 8 mA Cd diode capacitance f = 1 MHz; VR = 4 V; see Fig 7 60 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 100 K/W |
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