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74LVT245BD Scheda tecnica(PDF) 4 Page - NXP Semiconductors

Il numero della parte 74LVT245BD
Spiegazioni elettronici  3.3 V octal transceiver with direction pin (3-state)
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

74LVT245BD Scheda tecnica(HTML) 4 Page - NXP Semiconductors

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74LVT245B_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 8 May 2008
4 of 15
NXP Semiconductors
74LVT245B
3.3 V octal transceiver with direction pin (3-state)
6.
Functional description
[1]
H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high impedance OFF-state.
7.
Limiting values
[1]
Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
[2]
The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°C.
[3]
The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.
[4]
For SO20 packages: above 70
°C derate linearly with 8 mW/K.
For SSOP20 and TSSOP20 packages: above 60
°C derate linearly with 5.5 mW/K.
For DHVQFN20 packages: above 60
°C derate linearly with 4.5 mW/K.
Table 3.
Function selection
Inputs
Inputs/outputs
OE
DIR
An
Bn
L
L
An = Bn
inputs
L
H
inputs
Bn = An
HX
Z
Z
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).[1][2]
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
+4.6
V
VI
input voltage
[3]
−0.5
+7.0
V
VO
output voltage
output in OFF or HIGH state
[3]
−0.5
+7.0
V
IIK
input clamping current
VI < 0
−50
-
mA
IOK
output clamping current
VO < 0
−50
-
mA
IO
output current
output in LOW state
-
128
mA
output in HIGH state
−64
-
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
[2] -
150
°C
Ptot
total power dissipation
Tamb = −40 °C to +85 °C
[4] -
500
mW


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