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74LVT245BD Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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74LVT245BD Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 15 page 74LVT245B_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 8 May 2008 4 of 15 NXP Semiconductors 74LVT245B 3.3 V octal transceiver with direction pin (3-state) 6. Functional description [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high impedance OFF-state. 7. Limiting values [1] Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. [2] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C. [3] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. [4] For SO20 packages: above 70 °C derate linearly with 8 mW/K. For SSOP20 and TSSOP20 packages: above 60 °C derate linearly with 5.5 mW/K. For DHVQFN20 packages: above 60 °C derate linearly with 4.5 mW/K. Table 3. Function selection Inputs Inputs/outputs OE DIR An Bn L L An = Bn inputs L H inputs Bn = An HX Z Z Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).[1][2] Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +4.6 V VI input voltage [3] −0.5 +7.0 V VO output voltage output in OFF or HIGH state [3] −0.5 +7.0 V IIK input clamping current VI < 0 −50 - mA IOK output clamping current VO < 0 −50 - mA IO output current output in LOW state - 128 mA output in HIGH state −64 - mA Tstg storage temperature −65 +150 °C Tj junction temperature [2] - 150 °C Ptot total power dissipation Tamb = −40 °C to +85 °C [4] - 500 mW |
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