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CSD17304Q3 Scheda tecnica(PDF) 5 Page - Texas Instruments |
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CSD17304Q3 Scheda tecnica(HTML) 5 Page - Texas Instruments |
5 / 10 page TC - Case Temperature - °C -75 -25 25 75 125 175 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 1 G007 ID = 17A VGS = 8V VSD - Source-to-Drain Voltage - V 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 1 10 100 TC = 25°C TC = 125°C G008 VDS - Drain-to-Source Voltage - V 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1k 1ms 10ms 11110 1s DC 100ms G009 Area Limited by RDS(on) Single Pulse Typical RθJA = 126°C/W (min Cu) t(AV) - Time in Avalanche - ms 0.01 0.1 1 10 100 1 10 100 1k 1 10 100 1k TC = 25°C TC = 125°C G010 TC - Case Temperature - °C -50 -25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 G011 CSD17304Q3 www.ti.com SLPS258 – FEBRUARY 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) Figure 8. Normalized On-State Resistance vs. Temperature Figure 9. Typical Diode Forward Voltage Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs. Temperature Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): CSD17304Q3 |
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