74AUP2G38GT datasheet(6/17 Pages) NXP

Il numero della parte	74AUP2G38GT

Spiegazioni elettronici	Low-power dual 2-input NAND gate; open drain

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Produttore elettronici	NXP [NXP Semiconductors]

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6 / 17 page

74AUP2G38_4

Product data sheet

Rev. 04 — 8 October 2009

6 of 17

NXP Semiconductors

74AUP2G38

Low-power dual 2-input NAND gate; open drain

Tamb = −40 °C to +85 °C

VIH

HIGH-level input voltage

VCC = 0.8 V

0.70VCC

--

V

VCC = 0.9 V to 1.95 V

0.65VCC

--

V

VCC = 2.3 V to 2.7 V

1.6

-

V

VCC = 3.0 V to 3.6 V

2.0

-

V

VIL

LOW-level input voltage

VCC = 0.8 V

-

0.30VCC

V

VCC = 0.9 V to 1.95 V

-

0.35VCC

V

VCC = 2.3 V to 2.7 V

-

0.7

V

VCC = 3.0 V to 3.6 V

-

0.9

V

VOL

LOW-level output voltage

VI = VIH or VIL

IO = 20 µA; VCC = 0.8 V to 3.6 V

-

0.1

V

IO = 1.1 mA; VCC = 1.1 V

-

0.3VCC

V

IO = 1.7 mA; VCC = 1.4 V

-

0.37

V

IO = 1.9 mA; VCC = 1.65 V

-

0.35

V

IO = 2.3 mA; VCC = 2.3 V

-

0.33

V

IO = 3.1 mA; VCC = 2.3 V

-

0.45

V

IO = 2.7 mA; VCC = 3.0 V

-

0.33

V

IO = 4.0 mA; VCC = 3.0 V

-

0.45

V

II

input leakage current

VI = GND to 3.6 V; VCC = 0 V to 3.6 V

-

±0.5

µA

IOZ

OFF-state output current

VI = VIH or VIL; VO = 0 V to 3.6 V;

VCC = 0 V to 3.6 V

--

±0.5

µA

IOFF

power-off leakage current

VI or VO = 0 V to 3.6 V; VCC = 0 V

-

±0.5

µA

∆IOFF

additional power-off

leakage current

VI or VO = 0 V to 3.6 V;

VCC = 0 V to 0.2 V

--

±0.6

µA

ICC

supply current

VI = GND or VCC; IO = 0 A;

VCC = 0.8 V to 3.6 V

-

0.9

µA

∆ICC

additional supply current

VI = VCC − 0.6 V; IO = 0 A;

VCC = 3.3 V

--

50

µA

Table 7.

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Typ

Max

Unit

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