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74AHCT1G00 Scheda tecnica(PDF) 5 Page - NXP Semiconductors |
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74AHCT1G00 Scheda tecnica(HTML) 5 Page - NXP Semiconductors |
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5 / 11 page  74AHC_AHCT1G00_6 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 06 — 30 May 2007 5 of 11 NXP Semiconductors 74AHC1G00; 74AHCT1G00 2-input NAND gate 11. Dynamic characteristics [1] tpd is the same as tPLH and tPHL. [2] Typical values are measured at VCC = 3.3 V. [3] Typical values are measured at VCC = 5.0 V. [4] CPD is used to determine the dynamic power dissipation PD (µW). PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. ICC supply current VI =VCC or GND; IO = 0 A; VCC = 5.5 V - - 1.0 - 10 - 40 µA ∆ICC additional supply current per input pin; VI = 3.4 V; other inputs at VCC or GND; IO = 0 A; VCC = 5.5 V - - 1.35 - 1.5 - 1.5 mA CI input capacitance - 1.5 10 - 10 - 10 pF Table 7. Static characteristics …continued Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max Table 8. Dynamic characteristics GND = 0 V; tr = tf = ≤ 3.0 ns. For test circuit see Figure 6. Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max For type 74AHC1G00 tpd propagation delay A and B to Y; see Figure 5 [1] VCC = 3.0 V to 3.6 V [2] CL = 15 pF - 4.5 7.9 1.0 9.5 1.0 10.5 ns CL = 50 pF - 6.5 11.4 1.0 13.0 1.0 14.5 ns VCC = 4.5 V to 5.5 V [3] CL = 15 pF - 3.5 5.5 1.0 6.5 1.0 7.0 ns CL = 50 pF - 4.9 7.5 1.0 8.5 1.0 9.5 ns CPD power dissipation capacitance per buffer; CL =50pF;f=1 MHz; VI = GND to VCC [4] -17- - - - - pF For type 74AHCT1G00 tpd propagation delay A and B to Y; see Figure 5; VCC = 4.5 V to 5.5 V [1] [3] CL = 15 pF - 3.6 6.2 1.0 7.1 1.0 8.0 ns CL = 50 pF - 5.0 7.9 1.0 9.0 1.0 10.0 ns CPD power dissipation capacitance per buffer; VI = GND to VCC [4] -18- - - - - pF |
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