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FMMT415 Scheda tecnica(PDF) 1 Page - Zetex Semiconductors |
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FMMT415 Scheda tecnica(HTML) 1 Page - Zetex Semiconductors |
1 / 2 page SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 4 - OCTOBER 1995 7 FEATURES * Specifically designed for Avalanche mode operation * 60A Peak Avalanche Current (Pulse width=20ns) APPLICATIONS * Laser LED drivers * Fast edge generation * High speed pulse generators PARTMARKING DETAIL FMMT415 415 FMMT417 417 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMT415 FMMT417 UNIT Collector-Base Voltage VCBO 260 320 V Collector-Emitter Voltage VCEO 100 100 V Emitter-Base Voltage VEBO 6V Continuous Collector Current IC 500 mA Peak Collector Current (Pulse Width=20ns) ICM 60 A Power Dissipation Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage FMMT415 V(BR)CES 260 V IC=1mA Tamb= -55 to +150°C FMMT417 320 V IC=1mA Collector-Emitter Breakdown Voltage VCEO(sus) 100 V IC=100µA Emitter-Base Breakdown Voltage V(BR)EBO 6V IE=10µA Collector Cut-Off Current ICBO 0.1 10 µ A µ A VCB=180V VCB=180V, Tamb=100°C Emitter Cut-Off Current IEBO 0.1 µ A VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=10mA, IB=1mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=10mA, IB=1mA* Current in Second Breakdown (Pulsed) ISB 15 25 A A VC=200V, CCE=620pF VC=250V, CCE=620pF Static Forward Current Transfer Ratio hFE 25 IC=10mA, VCE=10V* Transition Frequency fT 40 MHz IC=10mA, VCE=20V f=20MHz Collector-Base Capacitance Ccb 8pF VCB=20V, IE=0 f=100MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FMMT415 FMMT417 FMMT415 FMMT417 Drive Current = 5mA/ns TYPICAL CHARACTERISTICS Maximum Avalanche Current v Pulse Width hFE v IC Minimum starting voltage as a function of capacitance IUSB v Temperature for the specified conditions Minimum starting voltage as a function of drive current 040 20 80 100 120 140 160 180 60 0 20 40 60 80 100 120 140 160 180 1. 2. 3. Pulse Width (ns) 1. >4x10 Operations Without Failure 2. 10 Operations To Failure 3. 10 Operations To Failure -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 Temperature (°C) V+ = 250V V+ = 200V 100µA 1mA 10mA 100mA 1A 0 20 40 60 80 100 Collector Current 175°C 25°C -55°C 100p 1n 10n 100n 100 120 140 160 180 200 220 Risetime of Base Collector-Emitter Capacitance (F) I* =50mA I* =100mA I* =200mA 110 145 150 155 160 165 170 175 180 Risetime of Base Drive (mA/ns) I* =60mA I* =100mA I* =200mA C=620pF -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature (°C) 100 120 140 150 160 C = 620pF Minimum starting voltage as a function of temperature V+- =10V % ! C B E SOT23 3 - 104 3 - 105 |
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