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2PD601AR Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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2PD601AR Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2004 Feb 12 4 NXP Semiconductors Product data sheet NPN general purpose transistors; 50 V, 100 mA 2PD601A series CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current IE = 0; VCB = 60 V − 10 nA IE = 0; VCB = 60 V; Tj = 150 °C − 5 μA IEBO emitter-base cut-off current IC = 0; VEB = 5 V − 10 nA hFE DC current gain IC = 100 mA; VCE = 2 V; note 1 90 − hFE DC current gain IC = 2 mA; VCE = 10 V group Q 160 260 group R 210 340 group S 290 460 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA; note 1 − 250 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 3 pF fT transition frequency IC = 2 mA; VCE = 10 V; f = 100 MHz 100 − MHz |
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