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2PD601AR Scheda tecnica(PDF) 4 Page - NXP Semiconductors

Il numero della parte 2PD601AR
Spiegazioni elettronici  NPN general purpose transistors; 50 V, 100 mA
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

2PD601AR Scheda tecnica(HTML) 4 Page - NXP Semiconductors

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2004 Feb 12
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors; 50 V,
100 mA
2PD601A series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1.
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0; VCB = 60 V
10
nA
IE = 0; VCB = 60 V; Tj = 150 °C
5
μA
IEBO
emitter-base cut-off current
IC = 0; VEB = 5 V
10
nA
hFE
DC current gain
IC = 100 mA; VCE = 2 V; note 1
90
hFE
DC current gain
IC = 2 mA; VCE = 10 V
group Q
160
260
group R
210
340
group S
290
460
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 10 mA; note 1
250
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
3
pF
fT
transition frequency
IC = 2 mA; VCE = 10 V;
f = 100 MHz
100
MHz


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