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TIP125 Scheda tecnica(PDF) 2 Page - SemiHow Co.,Ltd. |
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TIP125 Scheda tecnica(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 5 page ◎ SEMIHOW REV.A0,Oct 2007 TIP125/126/127 CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP125 : TIP126 : TIP127 V CBO -60 -80 -100 V V V Collector-Emitter Voltage : TIP125 : TIP126 : TIP127 V CEO -60 -80 -100 V V V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=25℃) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature V EBO I C I CP I B P C P C T J T STG -5 -5 -8 -120 2 65 150 -65~150 V A A ㎃ W W ℃ ℃ Absolute Maximum Ratings T a=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Min Max Unit Collector-Emitter Sustaining Voltage : TIP125 : TIP126 : TIP127 V CEO(SUS) I C=-100mA, IB=0 -60 -80 -100 V V V Collector Cut-off Current : TIP125 : TIP126 : TIP127 I CEO V CE= -30V,IB=0 V CE= -40V,IB=0 V CE= -50V,IB=0 -2 -2 -2 ㎃ ㎃ ㎃ Collector Cut-off Current : TIP125 : TIP126 : TIP127 I CBO V CE= -60V,IE=0 V CE= -80V,IE=0 V CE= -100V,IE=0 -1 -1 -1 ㎃ ㎃ ㎃ Emitter Cut-off Current I EBO V EB= -5V,IC=0 -2 ㎃ DC Current Gain h FE V CE= -3V,IC= -0.5A V CE= -3V,IC= -3A 1000 1000 Collector-Emitter Saturation Voltage V CE(sat) I C= -3A,IB= -12mA I C= -5A,IB= -20mA -2 -4 V V Base-Emitter ON Voltage V BE(on) V CE= -3V,IC= -3A -2.5 V Output Capacitance C ob V CB= -10V,IE=0, f=0.1MHz 300 ㎊ Electrical Characteristics T a=25℃ unless otherwise noted TO-220 1. Base 2. Collector 3. Emitter 1 2 3 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122 PNP Epitaxial Silicon Darlington Transistor Equivalent Circuit * Pulse Test: PW ≤300us, Duty Cycle≤2% |
Codice articolo simile - TIP125 |
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Descrizione simile - TIP125 |
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