SD330S-T3 datasheet(1/3 Pages) WTE

Il numero della parte	SD330S-T3

Spiegazioni elettronici	3.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

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Produttore elettronici	WTE [Won-Top Electronics]

Homepage	http://www.wontop.com

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SD320S – SD3100S

1 of 3

SD320S – SD3100S

3.0A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

!

Schottky Barrier Chip

A

C

!

Guard Ring Die Construction for

B

J

Transient Protection

D

!

High Current Capability

!

Low Power Loss, High Efficiency

!

High Surge Current Capability

E

!

For Use in Low Voltage, High Frequency

K

Inverters, Free Wheeling, and Polarity

G

Protection Applications

H

L

P

Mechanical Data

!

Case: Molded Plastic

!

Terminals: Plated Leads Solderable per

MIL-STD-750, Method 2026

!

Polarity: Cathode Band

PIN 3 -

+ Case PIN 2

!

Weight: 0.4 grams (approx.)

Single

!

Mounting Position: Any

!

Marking: Type Number

!

Standard Packaging: 16mm Tape (EIA-481)

Maximum Ratings and Electrical Characteristics @T

A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

SD

320S

SD

330S

SD

340S

SD

350S

SD

360S

SD

380S

SD

3100S

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

20

30

40

50

60

80

100

V

RMS Reverse Voltage

VR(RMS)

14

21

28

35

42

56

70

V

Average Rectified Output Current

@TL = 75°C

IO

3.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

IFSM

75

A

Forward Voltage (Note 1)

@IF = 3.0A

VFM

0.5

0.64

0.85

V

Peak Reverse Current

@TA = 25°C

At Rated DC Blocking Voltage

@TA = 100°C

IRM

0.2

20

mA

Typical Junction Capacitance (Note 2)

Cj

250

pF

Typical Thermal Resistance Junction to Ambient

RJA

80

K/W

Operating Temperature Range

Tj

-50 to +125

°C

Storage Temperature Range

TSTG

-50 to +150

°C

Note: 1. Mounted on P.C. Board with 14mm2 (0.13mm thick) copper pad.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

WTE

POWER SEMICONDUCTORS

D PAK/TO-252AA

Dim

Min

Max

A

6.4

6.8

B

5.0

5.4

C

2.35

2.75

D

—1.60

E

5.3

5.7

G

2.3

2.7

H

0.4

0.8

J

0.4

0.6

K

0.3

0.7

L

0.50 Typical

P

—2.3

All Dimensions in mm

PIN 1

2

3

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