ES6U3 datasheet(1/5 Pages) ROHM

Il numero della parte	ES6U3

Spiegazioni elettronici	4V Drive NchSBD MOSFET

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Produttore elettronici	ROHM [Rohm]

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2009.03 - Rev.A

4V Drive Nch+SBD MOSFET

ES6U3

Structure

Dimensions (Unit : mm)

Silicon N-channel MOSFET /

Schottky barrier diode

Features

1) Nch MOSFET and schottky barrier diode

are put in WEMT6 package.

2) High-speed switching, Low On-resistance.

3) Built-in Low VF schottky barrier diode.

Applications

Inner circuit

Switching

Package specifications

Package

Code

Taping

Basic ordering unit (pieces)

ES6U3

T2R

8000

Type

Absolute maximum ratings (Ta=25

°C)

∗1

Parameter

V

VDSS

Symbol

V

VGSS

A

ID

A

IDP

A

IS

A

ISP

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Source current

(Body diode)

30

±1.4

±2.8

0.5

2.8

°C

Tch

Channel temperature

150

∗2

PD

Power dissipation

W / ELEMENT

0.7

±20

∗1

Parameter

V

VRM

Symbol

V

VR

A

IF

A

IFSM

Tj

Limits

Unit

Repetitive peak reverse voltage

<Di>

Reverse voltage

Forward current

∗1 60Hz 1cyc.

∗2 Mounted on a ceramic board

Forward current surge peak

Junction temperature

25

20

0.5

2.0

∗2

Power dissipation

W / ELEMENT

PD

0.5

150

°C

∗

Parameter

Symbol

W / TOTAL

PD

°C

Tstg

Limits

Unit

Power dissipation

Range of storage temperature

∗ Mounted on a ceramic board

−55 to +150

0.8

WEMT6

(6)

(5)

(4)

(1)

(2)

(3)

Abbriviated symbol : U03

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

(6)Drain

∗1 ESD protection diode

∗2 Body diode

∗2

∗1

(1)

(2)

(6)

(3)

(4)

(5)

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