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CSD17313Q2 Scheda tecnica(PDF) 4 Page - Texas Instruments

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Il numero della parte CSD17313Q2
Spiegazioni elettronici  30V N-Channel NexFET??Power MOSFET
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Produttore elettronici  TI [Texas Instruments]
Homepage  http://www.ti.com
Logo TI - Texas Instruments

CSD17313Q2 Scheda tecnica(HTML) 4 Page - Texas Instruments

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VDS - Drain-to-Source Voltage - V
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
6
7
8
9
10
VGS = 2.5V
VGS = 3V
VGS = 3.5V
VGS = 4.5V
VGS = 8V
G001
VGS - Gate-to-Source Voltage - V
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0
1
2
3
4
5
6
7
8
9
10
TC = -55°C
TC = 25°C
TC = 125°C
G002
VDS = 5V
Qg - Gate Charge - nC
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
6
7
8
G003
ID = 4A
VDS = 15V
VDS - Drain-to-Source Voltage - V
0
5
10
15
20
25
30
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
G004
f = 1MHz
VGS = 0V
TC - Case Temperature - °C
-75
-25
25
75
125
175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
G005
ID = 250µA
VGS - Gate-to-Source Voltage - V
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
TC = 25°C
TC = 125°C
G006
ID = 4A
CSD17313Q2
SLPS260A – MARCH 2010 – REVISED MARCH 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 4. Gate Charge
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate-to-Source Voltage
4
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