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2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.C

Power Transistor (100V, 2A)

2SD1980 / 2SD1867

Features

Dimensions (Unit : mm)

1) Darlington connection for high DC current gain.

2) Built-in resistor between base and emitter.

3) Built-in damper diode.

4) Complements the 2SB1316.

inner circuit

Ω

Ω

B

C

E

C

B

E

: Base

: Collector

: Emitter

Absolute maximum ratings (Ta=25

°C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector

power

dissipation

Junction temperature

Storage temperature

∗1 Single pulse Pw

Parameter

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

100

100

6

2

1

1

10

150

−55 to +150

Unit

V

V

V

A(DC)

3

A(Pulse)

W

W

W(Tc

=25°C)

2SD1980

2SD1867

°C

°C

∗1

∗2

Package

Code

Basic ordering unit (pieces)

Marking

∗

Type

2SD1980

2SD1867

CPT3

ATV

1k to 10k

1k to 10k

2500

2500

TL

TV2

−−

Electrical characteristics (Ta=25

°C)

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cutoff current

Emitter cutoff current

Output capacitance

Collector-emitter saturation voltag

DC current transfer ratio

Measured using pulse current.

∗

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Cob

100

100

−

−

−

−

−

−

−

−

25

80

−

−

10

3

−

−

V

V

−−

V

µA

mA

pF

= 50µA

= 5mA

= 5mA

= 100V

= 5V

−−

−−

1.5

V

2.0

V

= 1A/1mA

1000

−

10000

−

∗

∗

Emitter-base breakdown voltage

Base-Emitter saturation voltage

Transition frequency

6

MHz

2SD1980

(3) Emitter

(2) Collector

(1) Base

ROHM : CPT3

EIAJ : SC-63

2SD1867

(2) Collector

(1) Emitter

ROHM : ATV

Taping specifications

(3) Base

0.45

1.05

0.5

(1)

0.65Max.

2.54

(2)

2.54

(3)

6.8

2.5

6.5

2.3

(2)

(3)

0.65

(1)

0.75

2.3

0.9

5.1

2.3

0.5

1.0

0.5