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TPC6110 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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TPC6110 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPC6110 2009-07-17 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC6110 Power Management Switch Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS −25/+20 V DC (Note 1) ID −4.5 Drain current Pulse (Note 1) IDP −18 A Drain power dissipation (t = 5 s) (Note 2a) PD 2.2 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W Single pulse avalanche energy (Note 3) EAS 3.4 mJ Avalanche current IAR −2.3 A Repetitive avalanche energy (Note 4) EAR 0.025 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Circuit Configuration Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 56.8 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 °C/W Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages. This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3T1A Weight: 0.011 g (typ.) 6 4 1 2 3 5 |
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