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1N4448A0 Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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1N4448A0 Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  1N4148/1N4448/1N914B 500mW High Speed Switching Diode Small Signal Diode Fast switching device(Trr<4.0nS) Through-hole device type mounting Moisture sensitivity level 1 Solder hot dip Tin(Sn) lead finish Pb free version and RoHS compliant Min Max Min Max Case : DO-35 package (SOD-27) 0.45 0.55 0.018 0.022 High temperature soldering guaranteed : 260°C/10s 3.05 5.08 0.120 0.200 25.4 38.1 1.000 1.500 1.53 2.28 0.060 0.090 Package DO-35 DO-35 Maximum Ratings 8.3ms Electrical Characteristics IR=100uA IR=5uA Forward Voltage 1N4448, 1N914B IF=5.0mA 1N4148 IF=10.0mA 1N4448, 1N914B IF=100.0mA VR=20V VR=75V Junction Capacitance VR=0, f=1.0MHz Reverse Recovery Time (Note 2) Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: IF=10mA, IR=60mA, RL=100Ω, IRR=1mA A 1Nxxxx A0 5Kpcs / Ammo Type Number Units PD V DO-35 Axial Lead HERMETICALLY SEALED GLASS Polarity : Indicated by cathode band Non-Repetitive Peak Forward Surge Current IFSM Pulse Width 2.0 mW Rating at 25°C ambient temperature unless otherwise specified. 100 Repetitive Peak Reverse Voltage VRRM 10Kpcs / 14" Reel Maximum Ratings and Electrical Characteristics Junction and Storage Temperature Range Mean Forward Current IFM IO TJ, TSTG RθJA Non-Repetitive Peak Forward Current Thermal Resistance (Junction to Ambient) (Note 1) -65 to + 150 450 150 °C/W 240 mA mA °C CJ Type Number Symbol 75 100 Reverse Breakdown Voltage V(BR) Reverse Leakage Current Min Trr ns 1.0 1.0 25 4.0 pF VF IR μA 0.72 Max nA V 0.62 Units V 5.0 4.0 All External Surfaces are Corrosion Resistant and Leads are Readily Solderable Value 500 Power Dissipation Symbol Weight : 109 ± 4 mg D 1Nxxxx R0 Ordering Information Features Mechanical Data Unit (mm) C Part No. Packing Unit (inch) Dimensions A B A B C D Version : C09 |
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