CYStech Electronics Corp.

Spec. No. : C655J3

Issued Date : 2008.07.25

Revised Date :2009.02.04

Page No. : 1/6

BTB1580J3

CYStek Product Specification

PNP Epitaxial Planar Transistor

BTB1580J3

-120V

-4A

600mΩ

Description

The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low

speed switching application. Pb-free package process is adopted.

Equivalent Circuit

Outline

°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

-120

V

Collector-Emitter Voltage

-120

V

Emitter-Base Voltage

-5

V

Collector Current (DC)

-4

A

Collector Current (Pulse)

-6

A

1.5

W

Pd

20

W

Thermal Resistance, Junction to Ambient

83.3

°C/W

Thermal Resistance, Junction to Case

6.25

°C/W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55~+150

°C

Note : Single Pulse Pw≦300μs, Duty≦2%.

BTB1580J3

B

C

E

8k

≒

60

≒

TO-252

B：Base

C：Collector

E：Emitter

≒

6K

B

C

E