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TS4GSDMHC Scheda tecnica(PDF) 5 Page - Transcend Information. Inc.

Il numero della parte TS4GSDMHC
Spiegazioni elettronici  4GB High Capacity miniSD Card
Download  27 Pages
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Produttore elettronici  TRANSCEND [Transcend Information. Inc.]
Homepage  http://www.transcendusa.com
Logo TRANSCEND - Transcend Information. Inc.

TS4GSDMHC Scheda tecnica(HTML) 5 Page - Transcend Information. Inc.

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4GB High Capacity miniSD Card
Transcend Information Inc.
5
Bus Operating Conditions
• General
Parameter
Symbol
Min.
Max.
Unit
Remark
Peak voltage on all lines
-0.3
VDD+0.3
V
All Inputs
Input Leakage Current
-10
10
µA
All Outputs
Output Leakage Current
-10
10
µA
• Power Supply Voltage
Parameter
Symbol
Min.
Max.
Unit
Remark
Supply voltage
VDD
2.7
3.6
V
Output High Voltage
VOH
0.75* VDD
V
IOH=-100uA@VDD Min.
Output Low Voltage
VOL
0.125* VDD
V
IOL=100uA@VDD Min.
Input High Voltage
VIH
0.625* VDD VDD+0.3
V
Input Low Voltage
VIL
VSS-0.3
0.25* VDD
V
Power up time
250
ms
From 0v to VDD Min.
• Current Consumption
The current consumption is measured by averaging over 1 second.
Before first command: Maximum 15 mA
During initialization: Maximum 100 mA
Operation in Default Mode: Maximum 100 mA
Operation in High Speed Mode: Maximum 200 mA
Operation with other functions: Maximum 500 mA.
Bus Signal Line Load
The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus
capacitance CBUS itself and the capacitance CCARD of each card connected to this line:
CL = CHOST + CBUS + Ν*CCARD
Where N is the number of connected cards.
Parameter
Symbol
Min.
Max.
Unit
Remark
Pull-up resistance
RCMD
RDAT
10
100
k
Ω
To prevent bus floating
Bus signal line capacitance
CL
40
pF
1 card
CHOST+CBUS shall not exceed
30 pF


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