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SB20150FCT Scheda tecnica(PDF) 1 Page - Won-Top Electronics |
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SB20150FCT Scheda tecnica(HTML) 1 Page - Won-Top Electronics |
1 / 4 page SB20150FCT – SB20200FCT 1 of 4 © 2008 Won-Top Electronics Pb SB20150FCT – SB20200FCT 20A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER Features Schottky Barrier Chip B Guard Ring for Transient Protection Low Forward Voltage Drop C Low Reverse Leakage Current High Surge Current Capability G A Plastic Material has UL Flammability Classification 94V-O PIN1 2 3 D Mechanical Data F E Case: ITO-220, Full Molded Plastic Terminals: Plated Leads Solderable per P MIL-STD-202, Method 208 Polarity: See Diagram I Weight: 2.24 grams (approx.) Mounting Position: Any H L Mounting Torque: 11.5 cm-kg (10 in-lbs) Max. Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 PIN 1 - + J PIN 3 - PIN 2 K Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB20150FCT SB20200FCT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 150 200 V RMS Reverse Voltage VR(RMS) 105 140 V Average Rectified Output Current @TC = 95°C IO 20 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200 A Forward Voltage @IF = 10A VFM 0.92 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 100 mA Typical Junction Capacitance (Note 1) Cj 1100 pF Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS ITO-220 Dim Min Max A 14.60 15.40 B 9.70 10.30 C 2.55 2.85 D 3.56 4.16 E 13.00 13.80 F 0.30 0.90 G 3.00 Ø 3.50 Ø H 6.30 6.90 I 4.20 4.80 J 2.50 2.90 K 0.36 0.80 L 2.90 3.30 P 2.29 2.79 All Dimensions in mm |
Codice articolo simile - SB20150FCT_08 |
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Descrizione simile - SB20150FCT_08 |
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