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ACE7401 Scheda tecnica(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE7401 Scheda tecnica(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 7 page ACE7401 Technology P-Channel Enhancement Mode MOSFET VER 1.2 2 Packaging Type SOT-23-3 3 1 2 Ordering information Selection Guide ACE7401 XX + H Electrical Characteristics TA=25 , unless otherwise ℃ noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -30 Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.4 -1.0 V Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA VDS=-24V, VGS=0V -1 Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V TJ=85℃ -5 uA On-State Drain Current ID(ON) VDS=-5V, VGS=-4.5V -4 A VGS=-10V, ID=-2.8A 0.105 0.115 Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-2.5A 0.125 0.135 Ω Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Halogen - free CM : SOT-323 Pb - free |
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