TLP250 datasheet(1/8 Pages) TOSHIBA

Il numero della parte	TLP250

Spiegazioni elettronici	TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

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TLP250

2004-06-25

1

TOSHIBA Photocoupler GaAlAs Ired & Photo−IC

TLP250

Transistor Inverter

Inverter For Air Conditionor

IGBT Gate Drive

Power MOS FET Gate Drive

The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a

integrated photodetector.

This unit is 8−lead DIP package.

TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.

• Input threshold current: IF=5mA(max.)

• Supply current (ICC): 11mA(max.)

• Supply voltage (VCC): 10−35V

• Output current (IO): ±1.5A (max.)

• Switching time (tpLH/tpHL): 1.5µs(max.)

• Isolation voltage: 2500Vrms(min.)

• UL recognized: UL1577, file No.E67349

• Option (D4) type

VDE approved: DIN VDE0884/06.92,certificate No.76823

Maximum operating insulation voltage: 630VPK

Highest permissible over voltage: 4000VPK

(Note) When a VDE0884 approved type is needed,

please designate the "option (D4)"

• Creepage distance: 6.4mm(min.)

Clearance: 6.4mm(min.)

Schmatic

Pin Configuration (top view)

8

7

6

5

1 : N.C.

2 : Anode

3 : Cathode

4 : N.C.

5 : GND

6 : VO (Output)

7 : VO

8 : VCC

1

2

3

4

2+

VF

IF

3-

ICC

(Tr 1)

VO

GND

(Tr 2)

IO

VO

VCC

8

7

6

5

A 0.1µF bypass capcitor must be

connected between pin 8 and 5 (See Note 5).

Truth Table

Tr1

Tr2

On

Off

Input

LED

Off

On

Unit in mm

TOSHIBA

11−10C4

Weight: 0.54 g

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