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TLP115A Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TLP115A Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TLP115A 2002-09-25 3 Electrical Characteristics (unless otherwise specified, Ta = 0~70°C, VCC = 4.5 ~ 5.5V, VFL ≤ 1.0V) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10mA, Ta =25°C 1.2 1.4 1.7 V Forward voltage temperature coefficient VF / Ta IF = 10mA ― -2 ― mV / °C Reverse current IR VR = 3V, Ta = 25°C ― ― 10 µA Capacitance between terminals CT VF = 0, f = 1MHz, Ta = 25°C ― 30 ― PF VF = 1.0, VO = 5.5V ― ― 250 High level output voltage IOH VF = 1.0, VO = 5.5V, Ta = 25°C ― 0.5 10 µA Low level output current VOL IF = 5mA IOL = 13mA (sinking) ― 0.4 0.6 V "H level output→L level output" input current IFH IOL = 13mA (sinking) VOL = 0.6V ― ― 5 mA High level supply current ICCH VCC = 5.5V, IF = 0 ― 7 15 mA Low level supply current ICCL VCC = 5.5V, IF = 10mA ― 12 19 mA Input-output insulation leakage current IS VS = 3540V, t = 5s Ta = 25°C (Note 4) ― ― 100 µA Isolation resistance RS R.H. ≤ 60%, VS = 500V DC Ta = 25°C (Note 4) 5×10 10 10 14 ― Ω Stray capacitance between input to output CS VS = 0, f = 1MHz Ta = 25°C (Note 4) ― 0.8 ― PF * All typical values are VCC = 5V, Ta = 25°C. |
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