2N4347 datasheet(1/3 Pages) COMSET

Il numero della parte	2N4347

Spiegazioni elettronici	HIGH POWER INDUSTRIAL TRANSISTORS

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Produttore elettronici	COMSET [Comset Semiconductor]

Homepage	http://comset.halfin.com

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COMSET SEMICONDUCTORS

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2N3442

2N4347

NPN silicon transistors designed for applications in industrial and commercial equipment including high

fidelity audio amplifiers, series and shunts regulators and power switches.

•

Low Collector-Emitter Saturation Voltage –

VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc – 2N4347

•

Collector-Emitter Sustaining Voltage-

VCEO(sus) = 120 Vdc (Min) – 2N4347

140 Vdc (Min) – 2N3442

•

Excellent Second-Breakdown Capability

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

2N4347

120

VCEO

#Collector-Emitter Voltage

2N3442

140

V

2N4347

140

VCB

Collector-Base Voltage

2N3442

160

Vdc

2N4347

VEB

Emitter-Base Voltage

2N3442

7.0

Vdc

2N4347

5.0

Continuous

2N3442

10

2N4347

10

IC

Collector Current

Peak

2N3442

15 (**)

Adc

2N4347

3.0

Continuous

2N3442

7.0

2N4347

8.0

IB

Base Current

Peak

2N3442

-

Adc

2N4347

100

@ TC = 25°

2N3442

117

2N4347

0.57

PD

Total Device Dissipation

Derate

above 25°

2N3442

0.67

Watts

W/°C

2N4347

TJ

Junction Temperature

2N3442

°C

2N4347

TS

Storage Temperature

2N3442

-65 to +200

°C

(**) This data guaranteed in addition to JEDEC registered data.

H

HIIG

GH

H P

PO

OW

WE

ER

R IIN

ND

DU

US

ST

TR

RIIA

AL

L T

TR

RA

AN

NS

SIIS

ST

TO

OR

RS

S

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