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2N3227 Scheda tecnica(PDF) 2 Page - Comset Semiconductor |
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2N3227 Scheda tecnica(HTML) 2 Page - Comset Semiconductor |
2 / 2 page COMSET SEMICONDUCTORS 2/2 Symbol Ratings Test Condition(s) Min Typ Mx Unit IC=10 mA, IB=1.0 mA - - 0.25 VCE(SAT) Collector-Emitter saturation Voltage (1) IC=100 m A, IB=10 mA - - 0.45 V IC=10 mA, IB=1.0 mA - - 0.85 VBE(SAT) Base-Emitter saturation Voltage (1) IC=100 m A, IB=10 mA - - 1.4 V VCE=1.0 V, IC=10 mA 100 - 300 VCE=1.0 V, IC=10 mA TA =-55°c 40 - - hFE DC Current Gain VCE=1.0 V, IC=100 mA 30 - - - hfe Small Signal Current Gain VCE=10 V, IC=10 mA , f=100MHz 5 - - - tS Storage time IC = IB1 = IB2 =10 mA - - 13 Toff Turn-off time IC=10 A;IB1= 3 mA;IB2 =1.5 mA;VCc=3.0 V - - 18 ton Turn-on time IC=10 A;IB1= 3 mA; VCc=3.0 V ; VEB(off) = 1.5 V - - 12 ns Cob Output Capacitance VCB=5 V ; IE=0 , f=140kHz - - 4.0 pF Cib Input Capacitance VBE=1 V ; IC=0 , f=140kHz - - 4.0 pF NPN 2N3227 MECHANICAL DATA CASE TO-18 Pin 1 : Emitter Pin 2 : Base Case : Collector |
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Descrizione simile - 2N3227 |
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