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IXZ4DF12N100 Scheda tecnica(PDF) 2 Page - IXYS Corporation |
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IXZ4DF12N100 Scheda tecnica(HTML) 2 Page - IXYS Corporation |
2 / 7 page IXZ4DF12N100 RF Power MOSFET & DRIVER Device Specifications Device Performance Symbol Test Condition Minimum Typical Maximum Rds(ON) VCC = 15V, ID = 0.5IDM25 Pulse Test, t ≤ 300 S, Duty Cycle ≤ 2% 0.7 VCC, VCCIN 8V 15V 20V IN (Signal Input) - 5V VCCIN+0.3V VIH (High Input Voltage) VCCIN -2V VCCIN+0.3V VIL (Low Input Voltage) 0.8V ZIN f = 1MHz 7960 Cstray f = 1MHz Any one pin to the back plane metal 46pf COSS VGS = 0V, VDS = 0.8VDSS(max) , f =1MHz 150pf tONDLY TC = 25°C VCC, VCCIN , VIN = 15V 1 S Pulse, VDS= 50V, RL = 2.5 20nS tOFFDLY 22.6nS tR TC = 25°C VCC, VCCIN, VIN = 15V 1 S Pulse, VDS = 50V, RL = 2.5 3nS tF 4.5nS Maximum Ratings Symbol Test Conditions fMAX ID = 0.5IDM25 40MHz VDSS 1000V VCC, VCCIN 20V IDSS VDS = 0.8VDSS TJ = 25C 50uA VGS = 0V TJ = 125C 1mA IDM25 TC = 25°C 12A IDM TC = 25°C, Pulse limited by TJM 72A IAR TC = 25°C 12A PT (MOSFET and Driver) TC = 25°C TBD 500W RthJC 0.25 °C/W RthJHS TBD °C/W Parameter Value Maximum Junction Temperature 150°C Operating Temperature Range - 40°C to 85°C Weight 5.5g |
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