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930104701 Scheda tecnica(PDF) 7 Page - ATMEL Corporation |
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930104701 Scheda tecnica(HTML) 7 Page - ATMEL Corporation |
7 / 16 page 7 4151N–AERO–04/09 M65608E Data Retention Characteristics Notes: 1. TAVAV = Read Cycle Time 2. CS1 = VCC or CS2 = CS1 = GND, Vin = GND/VCC, this parameter is only tested at VCC = 2V. 3. Parameters guaranteed but not tested Write Cycle Note: 1. Parameters guaranteed, not tested, with output loading 5 pF. Parameter Description Minimum Typical TA = 25 ⋅C Maximum Unit VCCDR VCC for data retention 2.0 – – V TCDR Chip deselect to data retention time 0.0 – – ns TR Operation recovery time TAVAV(1) –– ns ICCDR1 Data retention current at 2.0V –0.1 150 µA ICCDR2(2) Data retention current at 3.0V –0.2 200 µA Symbol Parameter 65608-30 65608-45 Unit Value TAVAW Write cycle time 30 45 ns min TAVWL Address set-up time 00 ns min TAVWH Address valid to end of write 22 35 ns min TDVWH Data set-up time 18 20 ns min TE1LWH CS1 low to write end 22 35 ns min TE2HWH CS2 high to write end 22 35 ns min TWLQZ Write low to high Z(1) 815 ns max TWLWH Write pulse width 22 35 ns min TWHAX Address hold from to end of write 00 ns min TWHDX Data hold time 00 ns min TWHQX Write high to low Z(1) 00 ns min |
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