TPCF8402 datasheet(4/11 Pages) TOSHIBA

Il numero della parte	TPCF8402

Spiegazioni elettronici	Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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4 / 11 page

TPCF8402

2009-09-29

4

N-channel

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

μA

Drain cut-off current

IDSS

VDS = 30 V, VGS = 0 V

⎯

10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

30

⎯

Drain-source breakdown

voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

15

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

⎯

2.5

V

VGS = 4.5 V, ID = 2.0 A

⎯

58

77

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 2.0 A

⎯

38

50

mΩ

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.0 A

3.4

6.8

⎯

S

Input capacitance

Ciss

⎯

470

⎯

Reverse transfer capacitance

Crss

⎯

60

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

80

⎯

pF

Rise time

tr

⎯

5.2

⎯

Turn-on time

ton

⎯

8.3

⎯

Fall time

tf

⎯

4.0

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, tw = 10 μs

⎯

22

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

10

⎯

Gate-source charge 1

Qgs1

⎯

1.7

⎯

Gate-drain (“miller”) charge

Qgd

VDD ≈ 24 V, VGS = 10 V, ID = 6 A

⎯

2.4

⎯

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

16.0

A

Forward voltage (diode)

VDSF

IDR = 4.0 A, VGS = 0 V

⎯

−1.2

V

VDD ∼− 15 V

0 V

VGS

10 V

ID = 2.0 A

VOUT

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