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TPCA8036-H Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte TPCA8036-H
Spiegazioni elettronici  Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??H)
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCA8036-H Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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TPCA8036-H
2008-08-18
1
TOSHIBA Field Effect Transistor
Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCA8036-H
High-Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 13 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 2.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 113 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
38
Drain current
Pulsed (Note 1)
IDP
114
A
Drain power dissipation
(Tc=25℃)
PD
45
W
Drain power dissipation
(t
= 10 s)
(Note 2a)
PD
2.8
W
Drain power dissipation
(t
= 10 s)
(Note 2b)
PD
1.6
W
Single-pulse avalanche energy
(Note 3)
EAS
188
mJ
Avalanche current
IAR
38
A
Repetitive avalanche energy
(Tc = 25℃) (Note 4)
EAR
0.18
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
8
5
1
4
4.25
± 0.2
5.0
± 0.2
S
S
0.05
A
0.595
0.4
± 0.1
1
4
0.15
± 0.05
8
5
1.27
A
0.05 M
JEDEC
JEITA
TOSHIBA
2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4
1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN


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