TPC8406-H datasheet(10/11 Pages) TOSHIBA

Il numero della parte	TPC8406-H

Spiegazioni elettronici	Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel竊뢓-Channel Ultra-High-Speed U-MOSIII)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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10 / 11 page

TPC8406-H

2009-09-29

10

N-Channel

rth – tw

Pulse width tw (s)

1

0.001

10

100

1000

0.01

0.1

1

10

100

1000

0.1

Safe operating area

Drain-source voltage VDS (V)

0.1

100

1

10

100

10

0.1

1

単発パルス

(3)

(2)

(4)

(1)

VDSS max

* Single - pulse

Ta

= 25°C

Curves must be derated linearly

with increase in temperature.

1 ms *

ID max (Pulse) *

10 ms *

Single-device value at dual

operation (Note 3b)

Single - pulse

Device mounted on a glass-epoxy board (a) (Note 2a)

(1)Single-device operation (Note 3a)

(2)Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3)Single-device operation (Note 3a)

(4)Single-device value at dual operation (Note 3b)

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