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TPC8041 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TPC8041 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPC8041 2009-09-29 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V VGS = 4.5 V, ID = 6.5 A ⎯ 9 13.5 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 6.5 A ⎯ 5.5 7 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 6.5 A 13 26 ⎯ S Input capacitance Ciss ⎯ 1270 ⎯ Reverse transfer capacitance Crss ⎯ 240 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 380 ⎯ pF Rise time tr ⎯ 11 ⎯ Turn-ON time ton ⎯ 20 ⎯ Fall time tf ⎯ 15 ⎯ Switching time Turn-OFF time toff Duty ≤ 1%, tw = 10 μs ⎯ 39 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 27 ⎯ Gate-source charge 1 Qgs1 ⎯ 4.2 ⎯ Gate-drain (“miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 13 A ⎯ 8.2 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 52 A Forward voltage (diode) VDSF IDR = 13 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ≈ 15 V 0 V VGS 10 V ID = 6.5 A VOUT |
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