TPC8027 datasheet(1/7 Pages) TOSHIBA

Il numero della parte	TPC8027

Spiegazioni elettronici	Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

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TPC8027

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

TPC8027

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

• Small footprint due to small and thin package

• Low drain-source ON resistance: RDS (ON) = 2.1 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 48 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)

• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

30

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

30

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

18

Drain current

Pulse (Note 1)

IDP

72

A

Drain power dissipation

(t

= 10 s)

(Note 2a)

PD

1.9

W

Drain power dissipation

(t

= 10 s)

(Note 2b)

PD

1.0

W

Single pulse avalanche energy

(Note 3)

EAS

84

mJ

Avalanche current

IAR

18

A

Repetitive avalanche energy

(Note 2a) (Note 4)

EAR

0.029

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note 1, Note 2, Note 3 and Note 4: See the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in

the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within

the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1B

Weight: 0.08 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4

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