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TPC6601 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TPC6601 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page TPC6601 2006-11-10 3 Base-emitter voltage VBE (V) Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector current IC (A) VBE (sat) – IC IC – VBE 10000 −0.001 1000 100 10 −0.01 −0.1 −1 −10 Ta = 100°C −55 Common emitter VCE = −2 V Single nonrepetitive pulse 25 −0.001 −1 −0.1 −0.01 −0.001 −0.01 −0.1 −1 −10 25 −55 Ta = 100°C Common emitter IC/IB = 30 Single nonrepetitive pulse −0.001 −0.01 −0.1 −1 −10 −10 −0.1 −1 Common emitter IC/IB = 30 Single nonrepetitive pulse Ta = 100°C 25 −55 Common emitter VCE = −2 V Single nonrepetitive pulse 25 −55 Ta = 100°C 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −0.6 −1.2 −1.8 −2.4 −3.0 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −0.6 −1.2 −1.8 −3.0 −2.4 Common emitter Ta = 25°C Single nonrepetitive IB = −2 mA 0 −4 −6 −10 −20 −30 −40 −60 −80 −100 |
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