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TPC6601 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte TPC6601
Spiegazioni elettronici  Transistor Silicon PNP Epitaxial Type
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6601 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

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TPC6601
2006-11-10
3
Base-emitter voltage VBE (V)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
VBE (sat) – IC
IC – VBE
10000
−0.001
1000
100
10
−0.01
−0.1
−1
−10
Ta
= 100°C
−55
Common emitter
VCE = −2 V
Single nonrepetitive
pulse
25
−0.001
−1
−0.1
−0.01
−0.001
−0.01
−0.1
−1
−10
25
−55
Ta
= 100°C
Common emitter
IC/IB = 30
Single nonrepetitive
pulse
−0.001
−0.01
−0.1
−1
−10
−10
−0.1
−1
Common emitter
IC/IB = 30
Single nonrepetitive
pulse
Ta
= 100°C
25
−55
Common emitter
VCE = −2 V
Single nonrepetitive
pulse
25
−55
Ta
= 100°C
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
−0.6
−1.2
−1.8
−2.4
−3.0
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
−0.6
−1.2
−1.8
−3.0
−2.4
Common emitter
Ta
= 25°C
Single nonrepetitive
IB = −2 mA
0
−4
−6
−10
−20
−30
−40
−60
−80
−100


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