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TC7MBL6126SFTG Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor |
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TC7MBL6126SFTG Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor |
4 / 11 page TC7MBL6125S,6126SFT/FK/FTG 2008-08-05 4 Electrical Characteristics DC Characteristics (Ta = −40 to 85°C) Parameter Symbol Test Condition VCC (V) Min Typ. Max Unit “H” level VIH ⎯ 1.65 to 3.6 0.7 × VCC ⎯ ⎯ Input voltage “L” l e v e l VIL ⎯ 1.65 to 3.6 ⎯ ⎯ 0.3 × VCC V Input leakage current (OE, S) VIN = 0 to 3.6V 1.65 to 3.6 ⎯ ⎯ ±1.0 μA Power off leakage current OE , OE = 0 to 3.6 V 0 ⎯ ⎯ 1.0 μA Off-state leakage current (switch off) A, B = 0 to VCC , OE =VCC(6125S) , OE=GND(6126S) 1.65 to 3.6 ⎯ ⎯ ±1.0 μA VIS = 0 V, IIS = 30 mA (Note1) 3.0 ⎯ 9 13 VIS = 3.0 V, IIS = 30 mA (Note1) 3.0 ⎯ 15 20 VIS = 2.4 V, IIS = 15 mA (Note1) 3.0 ⎯ 19 27 VIS = 0 V, IIS = 24 mA (Note1) 2.3 ⎯ 10 16 VIS = 2.3 V, IIS = 24 mA (Note1) 2.3 ⎯ 17 24 On resistance (Note2) VIS = 2.0 V, IIS = 15 mA (Note1) 2.3 ⎯ 21 30 Ω Quiescent supply current VIN = VCC or GND, IOUT = 0 3.6 ⎯ ⎯ 10 μA Note1: All typical values are at Ta=25 °C. Note2: Measured by the voltage drop between A and B pins at the indicated current through the switch. On resistance is determined by the lower of the voltages on the two (A or B) pins. AC Characteristics (Ta = −40 to 85°C) Characteristics Symbol Test Condition VCC (V) Min Max Unit 3.3 ± 0.3 ⎯ 6 2.5 ± 0.2 ⎯ 7 Output enable time tpZL tpZH Figure 1, Figure 2 1.8 ± 0.15 ⎯ 11 ns 3.3 ± 0.3 ⎯ 6 2.5 ± 0.2 ⎯ 7 Output disable time tpLZ tpHZ Figure 1, Figure 2 1.8 ± 0.15 ⎯ 11 ns Capacitive Characteristics (Ta = 25°C) Characteristics Symbol Test Condition VCC (V) Typ. Unit Control pin input capacitance CIN 3.0 3 pF OE =Vcc (6125S), OE=GND (6126S) Switch Off 3.0 6 pF Switch terminal capacitance CI/O OE =GND (6125S), OE= Vcc (6126S) Switch On 3.0 12 pF Note: This parameter is guaranteed by design |
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