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2SK2009 Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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2SK2009 Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page 2SK2009 2003-03-27 2 Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 ¾ ¾ ±0.1 mA Drain-source breakdown voltage V (BR) DSS ID = 1 mA, VGS = 0 30 ¾ ¾ V Drain cut-off current IDSS VDS = 30 V, VGS = 0 ¾ ¾ 10 mA Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.5 ¾ 1.5 V Forward transfer admittance ïYfsï VDS = 3 V, ID = 50 mA 100 ¾ ¾ mS Drain-source ON resistance RDS (ON) ID = 50 mA, VGS = 2.5 V ¾ 1.2 2 W Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 70 ¾ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 23 ¾ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ¾ 58 ¾ pF Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ¾ 0.06 ¾ Switching time Turn-off time toff VDD = 3 V, ID = 10 mA, VGS = 0~2.5 V ¾ 0.12 ¾ ms Switching Time Test Circuit |
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