TC2997B

REV0_20040412

TRANSCOM, INC., 90 Dasoong 7

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

P 1 / 3

1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs

FEATURES

• 20W Typical Power at 1.9 GHz

• 12 dB Typical Linear Power Gain at 1.9 GHz

• High Linearity: IP3 = 52 dBm Typical

• High Power Added Efficiency: Nominal PAE of 40 %

• Suitable for High Reliability Application

• Lg = 1 µm, Wg = 50 mm

• 100 % DC and RF Tested

DESCRIPTION

The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor

with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the

GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications

include high dynamic range power amplifier for commercials applications.

ELECTRICAL SPECIFICATIONS ( @ 1.9 GHz )

Symbol

CONDITIONS

MIN

TYP

MAX

UNIT

42

43

dBm

11

12

dB

IP3

Intercept Point of the 3

52

dBm

PAE

Power Added Efficiency at 1dB Compression Power

40

%

12.5

A

9000

mS

-1.7

Volts

20

22

Volts

Thermal Resistance

0.9

°C/W

PHOTO ENLARGEMENT