ST3401 datasheet(3/6 Pages) STANSON

Il numero della parte	ST3401

Spiegazioni elettronici	P Channel Enhancement Mode MOSFET

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Produttore elettronici	STANSON [Stanson Technology]

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ST3401

P Channel Enhancement Mode MOSFET

-4.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STP3401 2005. V1

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-30

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA

-0.4

-1.0

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±

100

nA

VDS=-24V,VGS=0V

-1

Zero Gate Voltage Drain

Current

IDSS

VDS=-24V,VGS=0V

TJ=55℃

-10

uA

On-State Drain Current

ID(on)

VDS≦-5V,VGS=-4.5V

-10

A

Drain-source On-Resistance

RDS(on)

VGS=-10V,ID=-4.0A

VGS=-4.5V,ID=-3.2A

VGS=-2.5V,ID=-1.2A

45

50

60

mΩ

Forward Transconductance

gfs

VDS=-5V,ID=-4.0V

10

S

Diode Forward Voltage

VSD

IS=-1.0A,VGS=0V

-0.8 -1.2

V

Dynamic

Total Gate Charge

Qg

14

21

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

VDS=-15V

VGS=-10V

ID≣-4.0A

3.7

nC

Input Capacitance

Ciss

540

Output Capacitance

Coss

131

Reverse Transfer

Capacitance

Crss

VDS=-15V

VGS=0V

F=1MHz

105

pF

10

15

Turn-On Time

td(on)

tr

15

25

31

50

Turn-Off Time

td(off)

tf

VDS=-15V

VGS=-15V

ID=-1A

RL=6Ω

RG=-10Ω

20

30

nS

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