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ST2302M Scheda tecnica(PDF) 3 Page - Stanson Technology |
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ST2302M Scheda tecnica(HTML) 3 Page - Stanson Technology |
3 / 6 page ST2302M N Channel Enhancement Mode MOSFET 3.6A 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2302M 2007. V1 3 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 20 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.5 1.2 V Gate Leakage Current IGSS VDS=0V,VGS=±12V ± 100 nA VDS=20V,VGS=0V 1 Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V TJ=55℃ 10 uA On-State Drain Current ID(on) VDS≧5V,VGS=4.5V VDS≧5V,VGS=2.5V 6 4 A Drain-source On-Resistance RDS(on) VGS=4.5V,ID=3.6A VGS=2.5V,ID=3.1A 0.09 0.13 Ω Forward Transconductance gfs VDS=5V,ID=3.6V 10 S Diode Forward Voltage VSD IS=1.6A,VGS=0V 0.85 1.2 V Dynamic Total Gate Charge Qg 5.4 10 Gate-Source Charge Qgs 0.65 Gate-Drain Charge Qgd VDS=10V VGS=4.5V ID≣3.6A 1.4 nC Input Capacitance Ciss 340 Output Capacitance Coss 115 Reverse Transfer Capacitance Crss VDS=10V VGS=0V F=1MHz 33 pF 12 25 Turn-On Time td(on) tr 36 60 34 60 Turn-Off Time td(off) tf VDD=10V RL=5.5Ω ID=3.6A VGEN=4.5V RG=6Ω 10 25 nS |
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