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ST2300 Scheda tecnica(PDF) 3 Page - Stanson Technology |
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ST2300 Scheda tecnica(HTML) 3 Page - Stanson Technology |
3 / 7 page ST2300 N Channel Enhancement Mode MOSFET 4A 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2300 2005. V1 3 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 20 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.4 1.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ± 100 nA VDS=20V,VGS=0V 1 Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V TJ=85℃ 10 uA On-State Drain Current ID(on) VDS≧5V,VGS=4.5V 6 A Drain-source On-Resistance RDS(on) VGS =10V,ID=6.0A VGS =4.5V,ID=5.0A VGS=2.5V,ID=4.5A VGS=1.8V,ID=4.0A 0.022 0.026 0.029 0.035 Ω Forward Tranconductance gfs VDS=15V,ID=5.0A 30 S Diode Forward Voltage VSD IS=1.7A,VGS=0V 0.9 1.3 V Dynamic Total Gate Charge Qg 10 13 Gate-Source Charge Qgs 1.4 Gate-Drain Charge Qgd VDS=10V VGS=4.5V ID≣5A 2.1 nC Input Capacitance Ciss 600 Output Capacitance Coss 120 Reverse Transfer Capacitance Crss VDS=10V VGS=0V F=1MHz 100 pF 15 25 Turn-On Time td(on) tr 40 60 45 65 Turn-Off Time td(off) tf VDD=10V RL=10Ω ID=1A VGEN=4.5V RG=6Ω 30 40 nS |
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