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FCA35N60 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FCA35N60 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FCA35N60 Rev. A www.fairchildsemi.com 2 Package Marking and Ordering Information T C = 25 oC unless otherwise noted Electrical Characteristics Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FCA35N60 FCA35N60 TO-3PN - - 30 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 600 - - V ID = 250µA, VGS = 0V, TJ = 150oC- 650 - V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC- 0.6 - V/oC BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 16A - 700 - V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 1 µA VDS = 480V, TC = 125oC- - 10 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 17.5A - 0.079 0.098 Ω gFS Forward Transconductance VDS = 40V, ID = 17.5A - 28.8 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 4990 6640 pF Coss Output Capacitance - 2380 3170 pF Crss Reverse Transfer Capacitance - 140 - pF Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz - 113 - pF Coss eff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 340 - pF Qg Total Gate Charge at 10V VDS = 480V, ID = 35A VGS = 10V (Note 4) - 139 181 nC Qgs Gate to Source Gate Charge - 31 - nC Qgd Gate to Drain “Miller” Charge - 69 - nC ESR Equivalent Series Resistance (G-S) Drain Open, F= 1MHZ -1.4 - Ω td(on) Turn-On Delay Time VDD = 300V, ID = 35A RG = 4.7Ω (Note 4) -34 78 ns tr Turn-On Rise Time - 120 250 ns td(off) Turn-Off Delay Time - 105 220 ns tf Turn-Off Fall Time - 73 155 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 35 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 105 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 35A - - 1.4 V trr Reverse Recovery Time VGS = 0V, ISD = 35A dIF/dt = 100A/µs - 614 - ns Qrr Reverse Recovery Charge - 16.3 - µC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: IAS = 17.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 35A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Essentially Independent of Operating Temperature Typical Characteristics |
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