KMB060N40BA datasheet(2/4 Pages) KEC

Il numero della parte	KMB060N40BA

Spiegazioni elettronici	N-Ch Trench MOSFET

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Produttore elettronici	KEC [KEC(Korea Electronics)]

Homepage	http://www.keccorp.com

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2009. 1. 14

2/4

KMB060N40BA

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain to Source Breakdown Voltage

BVDSS

VGS=0V, ID=250 A

40

-

V

Drain Cut-off Current

IDSS

VGS=0V, VDS=24V

-

1

A

Gate to Source Leakage Current

IGSS

VGS= 20V, VDS=0V

-

100

nA

Gate to Source Threshold Voltage

Vth

VDS=VGS, ID=250 A

1

1.8

3

V

Drain to Source ON Resistance

RDS(ON)*

VGS=10V, ID=14A

(Note4)

-

5.7

8.5

m

VGS=4.5V, ID=11A

(Note4)

-

7.5

11

Forward Transconductance

gfs*

VDS=5V, ID=14A

(Note4)

-

58

-

S

Dynamic

Input Capacitance

Ciss

VDS=20V, f=1MHz, VGS=0V

-

1280

-

pF

Ouput Capacitance

Coss

-

250

-

Reverse Transfer Capacitance

Crss

-

125

-

Gate Resistance

Rg

f=1MHz

-

1.5

-

Total Gate Charge

VGS=10V

Qg*

VDS=20V, VGS=10V, ID=14A

(Note4)

-

25.4

-

nC

VGS=5V

Qg*

-

13.8

-

Gate to Source Charge

Qgs*

-

5.7

-

Gate to Drain Charge

Qgd*

-

5.4

-

Turn-On Delay Time

td(on)*

VDD=20V, VGS=10V

ID=1A, RG=6

(Note4)

-

16

-

ns

Turn-On Rise Time

tr*

-

14

-

Turn-Off Delay Time

td(off)*

-

55

-

Turn-Off Fall Time

tf*

-

14

-

Source to Drain Diode Ratings

Source to Drain Forward Voltage

VSD*

VGS=0V, IS=14A

(Note4)

-

0.8

1.2

V

Note 4) Pulse Test : Pulse width <300

, Duty cycle < 2%

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