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BF844 Scheda tecnica(PDF) 1 Page - Motorola, Inc

Il numero della parte BF844
Spiegazioni elettronici  High Voltage Transistor(NPN)
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Produttore elettronici  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

BF844 Scheda tecnica(HTML) 1 Page - Motorola, Inc

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Motorola Small–Signal Transistors, FETs and Diodes Device Data
High Voltage Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
400
Vdc
Collector – Base Voltage
VCBO
450
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
300
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watt
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
400
Vdc
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
V(BR)CES
450
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
450
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc
Collector Cutoff Current
(VCB = 400 Vdc, IE = 0)
ICBO
0.1
µAdc
Collector Cutoff Current
(VCE = 400 Vdc, VBE = 0)
ICES
500
nAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
0.1
µAdc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Order this document
by BF844/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BF844
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
© Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER


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