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BF844 Scheda tecnica(PDF) 1 Page - Motorola, Inc |
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BF844 Scheda tecnica(HTML) 1 Page - Motorola, Inc |
1 / 6 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 400 Vdc Collector – Base Voltage VCBO 450 Vdc Emitter – Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 300 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 Watt mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 400 — Vdc Collector – Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) V(BR)CES 450 — Vdc Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 450 — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 — Vdc Collector Cutoff Current (VCB = 400 Vdc, IE = 0) ICBO — 0.1 µAdc Collector Cutoff Current (VCE = 400 Vdc, VBE = 0) ICES — 500 nAdc Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO — 0.1 µAdc 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Order this document by BF844/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BF844 CASE 29–04, STYLE 1 TO–92 (TO–226AA) 1 2 3 © Motorola, Inc. 1996 COLLECTOR 3 2 BASE 1 EMITTER |
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